Electrical characteristics of silicon-nodule-related via failures observed in aluminum-silicon interconnects
| Autor: | Manabu Itsumi, Hideo Yoshino, Satoshi Nakayama, Shin-ichi Ohfuji, Hideo Akiya |
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| Rok vydání: | 2000 |
| Předmět: |
inorganic chemicals
Materials science Silicon technology industry and agriculture chemistry.chemical_element Integrated circuit Condensed Matter Physics Thermal conduction Electrochemistry complex mixtures Acceptor law.invention chemistry Aluminium law General Materials Science Electrical and Electronic Engineering Ohm Composite material Voltage |
| Zdroj: | Journal of Solid State Electrochemistry. 4:125-130 |
| ISSN: | 1433-0768 1432-8488 |
| DOI: | 10.1007/s100080050009 |
| Popis: | We have evaluated the electrical characteristics of silicon-nodule-related via failures in the aluminum interconnects of silicon integrated circuits. Current-voltage measurements indicated that the conduction mechanism follows Ohm's law. The resistance was 1.5–3 kΩ for a silicon nodule at a via of 1.0 μm × 1.0 μm. When the applied voltage was 3–6 V, the resistance decreased abruptly. This transition (abrupt decrease in resistance) was irreversible. We think that the resistance of 1.5–3 kΩ and the transition voltage of 3–6 V are two factors characterizing the silicon nodule. We can explain these values by assuming that aluminum in the silicon nodules at a solubility limit concentration acts as an acceptor. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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