Confinement – assisted shock-wave-induced thin-film delamination (SWIFD) of copper indium gallium diselenide (CIGS) on a flexible substrate
| Autor: | Pierre Lorenz, Bing Han, Klaus Zimmer, Igor Zagoranskiy, Martin Ehrhardt, Lukas Bayer |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
General Physics and Astronomy chemistry.chemical_element 02 engineering and technology Substrate (electronics) 01 natural sciences law.invention Optics law 0103 physical sciences Solar cell Thin film Gallium 010308 nuclear & particles physics business.industry Surfaces and Interfaces General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics Laser Copper indium gallium selenide solar cells Surfaces Coatings and Films chemistry Optoelectronics 0210 nano-technology business Layer (electronics) Indium |
| Zdroj: | Applied Surface Science. 426:527-535 |
| ISSN: | 0169-4332 |
| Popis: | The laser structuring of CIGS (copper indium gallium (di)selenide) solar cell material without influence and damaging the functionality of the active layer is a challenge for laser methods The shock-wave-induced thin-film delamination (SWIFD) process allows structuring without thermal modifications due to a spatial separation of the laser absorption from the functional layer removal process. In the present study, SWIFD structuring of CIGS solar cell stacks was investigated. The rear side of the polyimide was irradiated with a KrF-Excimer laser. The laser-induced ablation process generates a traverse shock wave, and the interaction of the shock wave with the layer-substrate interface results in a delamination process. The effect of a water confinement on the SWIFD process was studied where the rear side of the substrate was covered with a ∼2 mm thick water layer. The resultant surface morphology was analysed and discussed. At a sufficient number of laser pulses N and laser fluences Φ, the CIGS layer can be selectively removed from the Mo back contact. The water confinement, as well as the increasing laser beam size A0 and N, results in the reduction of the necessary minimal laser fluence Φth. Further, the delaminated CIGS area increased with increasing Φ, N, and A0. |
| Databáze: | OpenAIRE |
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