Properties of low-pressure chemical vapor epitaxial GaN films grown using hydrazoic acid (HN3)

Autor:	D. G. Chtchekine, Y. Bu, Ming-Chang Lin, F. T. Bacalzo, K. K. Bajaj, Y. Chen, S. R. Stock, S. E. Ralph, G. D. Gilliland, L. P. Fu
Rok vydání:	1997
Předmět:	Materials science Photoluminescence Inorganic chemistry Analytical chemistry General Physics and Astronomy Chemical vapor deposition Epitaxy chemistry.chemical_compound chemistry Sapphire Hydrazoic acid Emission spectrum Triethylgallium Wurtzite crystal structure
Zdroj:	Journal of Applied Physics. 81:2197-2207
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.364253
Popis:	We have grown high-quality GaN films on sapphire using a new nitrogen precursor, hydrazoic acid (HN3). Films were grown at 600 °C on (0001) sapphire substrates in a low-pressure chemical-vapor-deposition system using triethylgallium and hydrazoic acid as precursors. Subsequently, we have conducted a complete study of the surface, structural, electrical, and optical properties of these GaN films, and our early results are very encouraging. All films were of wurtzite crystal structure, slightly polycrystalline, and n type at about 2×1017 cm−3. We find the films to be efficient light emitters in the near-band edge region of the spectrum. Analysis of the emission energies and kinetics suggests that the midgap emission results from a superimposed deep-donor-to-shallow-acceptor emission and a deep-donor-to-valence-band emission, where the deep donor consists of a distribution of energy levels, thereby yielding a broad emission band.
Databáze:	OpenAIRE
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