Broadband and Gate-Tunable Conducting Oxide Epsilon-Near-Zero Perfect Absorber
| Autor: | Sudip Gurung, Long Tao, Catherine Arndt, Aleksei Anopchenko, Jason D. Myers, Ho Wai Howard Lee |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Materials science
business.industry Zero (complex analysis) Oxide 01 natural sciences Indium tin oxide 010309 optics Atomic layer deposition chemistry.chemical_compound chemistry 0103 physical sciences Broadband Titanium dioxide Optoelectronics 010306 general physics business AND gate Hafnium dioxide |
| Zdroj: | Frontiers in Optics / Laser Science. |
| DOI: | 10.1364/fio.2018.jtu2a.90 |
| Popis: | We demonstrate broadband and gate-tunable conducting oxide epsilon-near-zero perfect absorbers grown by atomic layer deposition. Absorption bandwidth (> 90%) of 214 nm for Berreman mode in NIR region is realized. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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