Epitaxial structures based on compensated GaAs for γ- and X-ray detectors

Autor:	D.L. Budnitsky, S.M. Guschin, V.P. Germogenov, A.A. Larionov, O. P. Tolbanov, A.I. Potapov, A. P. Vorobiev, L.P. Porokhovnichenko
Rok vydání:	2001
Předmět:	Physics Nuclear and High Energy Physics business.industry X-ray detector Epitaxy Particle detector Semiconductor detector Impurity Electrical resistivity and conductivity Electric field Optoelectronics business Instrumentation Diode
Zdroj:	Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 466:33-38
ISSN:	0168-9002
DOI:	10.1016/s0168-9002(01)00821-x
Popis:	The growth and characteristics of the detector p–i–n-structures fabricated by means of the epitaxial methods are discussed. High-resistivity i-layers containing chromium as a compensated impurity have been grown on the n-GaAs substrates by the liquid-phase epitaxy method. The layer thicknesses are (150–250) μm, their resistivities lie in the interval ρ =(5×10 6 –2.5×10 8 ) ohm cm. The thin Zn-doped p-layer has been grown upon the i-layer by the vapour-phase epitaxy method. The electric field profiles in the p–i–n-diodes have been measured. The reverse current-voltage characteristics of the diodes have been analysed. The sensitivity of the structures to β- and γ- radiations has been investigated.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::bd2536124d36dde0769117e070d7c3a2 https://doi.org/10.1016/s0168-9002(01)00821-x Zobrazit plný text záznamu Full Text from ScienceDirect