MOCVD grown InGaP/GaAs multiple negative-differential-resistance (MNDR) resonant-tunneling bipolar transistors
| Autor: | Wen-Hui Chiou, Cheng-Zu Wu, Chih-Hung Yen, Hsi-Jen Pan, Wen-Chau Liu, Kuan-Po Lin, Chin-Ying Chen |
|---|---|
| Rok vydání: | 2001 |
| Předmět: |
business.industry
Superlattice Bipolar junction transistor General Physics and Astronomy Nanotechnology Condensed Matter::Mesoscopic Systems and Quantum Hall Effect chemistry.chemical_compound chemistry Ternary compound Electric field Gallium phosphide Indium phosphide Optoelectronics Metalorganic vapour phase epitaxy business Quantum tunnelling |
| Zdroj: | Le Journal de Physique IV. 11:Pr3-931 |
| ISSN: | 1155-4339 |
| DOI: | 10.1051/jp4:20013116 |
| Popis: | We propose two InGaP/GaAs resonant tunneling bipolar transistors (RTBT's) with different superlattice (SL) structures in the emitters. Based on the calculations of transmission probability, the ground-state and first excited-state minibands are estimated. The electron transmission through SL structures is significantly determined by the electric field behaviors across the barriers. The specific designs of barrier width in the SL structures are responsible for two electron transport mechanisms of sequential RT conduction associated with the minibands. Experimentally, at higher current levels, the double- and quaternary-negative difference resistance (NDR) phenomena are respectively observed for both devices at 300K. Furthermore, the experimental results are in good agreement with the theoretical prediction. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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