Lateral Solid Phase Crystallization of Amorphous Silicon Under High Pressure

Autor:	Rajiv K. Singh, Seung-Mahn Lee
Rok vydání:	1999
Předmět:	Amorphous silicon Materials science Silicon Annealing (metallurgy) Nanocrystalline silicon Nucleation chemistry.chemical_element Amorphous solid law.invention chemistry.chemical_compound Crystallography chemistry law Thin film Composite material Crystallization
Zdroj:	MRS Proceedings. 557
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-557-219
Popis:	We have investigated a novel surface-seeded crystallization technique at low processing temperatures (≤ 550°C) and high pressures (10MPa~25MPa) using polished polycrystalline diamond seeds. By controlling the high pressure, the nucleation and growth of silicon can be controlled to obtain improved quality silicon films on amorphous substrates at low temperatures. Depending on the annealing temperature and applied pressure, the orientation of crystallized silicon thin films varies as seen by x-ray diffraction and transmission electron microscopy results. In addition, crystallization of amorphous silicon thin films has effect on their roughness.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::bd21f600fef0cdeda37e4f1fba631000 https://doi.org/10.1557/proc-557-219 Zobrazit plný text záznamu Full text from SpringerLink