High-luminance SrS:Ce,Ga,F thin-film-electroluminescent devices
| Autor: | A. Naman, M. S. Bowen, P. N. Yocom, W. M. Dennis, James Kane, Kevin S. Jones, T. Nguyen, Sey-Shing Sun, Paul H. Holloway, Dean R. Evans |
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| Rok vydání: | 1998 |
| Předmět: |
Materials science
Photoluminescence business.industry Analytical chemistry chemistry.chemical_element Phosphor Electroluminescence Microstructure Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Crystallinity Optics chemistry Electrical and Electronic Engineering Thin film Gallium business Luminous efficacy |
| Zdroj: | Journal of the Society for Information Display. 6:61 |
| ISSN: | 1071-0922 |
| DOI: | 10.1889/1.1985207 |
| Popis: | Gallium codoping has been identified as an effective flux agent for SrS:Ce phosphor thin films. When rapid-thermal-annealed at temperatures above 750°C, the microstructure of sputtered SrS:Ce,Ga,F thin films underwent a transformation from columnar to spherulitic morphology. In addition, the crystal grain size increased by tenfold from 50 to 500 nm. Time-resolved photoluminescent measurements on 810°C-annealed SrS:Ce,Ga,F films showed decay times as long as 25 ns, indicating effective incorporation of Ce ions. As a result of crystallinity improvement, excellent electroluminescent performance, e.g., 60-Hz L 40 of 155 cd/m 2 , has been achieved in EL devices with 1.5-μm-thick SrS:Ce,Ga,F films. In addition, high luminous efficacy, e.g., e 40 = 1.15 Im/W, was achieved in devices with a thin SiON buffer layer added between the SrS:Ce and a BaTa 2 O 6 top insulator. |
| Databáze: | OpenAIRE |
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