Sputtering off Metals and Semiconductors by Low Energy Argon Ions

Autor:	G. K. Wehner, N. Laegreid
Rok vydání:	2013
Předmět:	Range (particle radiation) Argon Chemistry Analytical chemistry chemistry.chemical_element Plasma Hot cathode Ion gun law.invention Ion symbols.namesake Physics::Plasma Physics Sputtering law symbols Langmuir probe Atomic physics
DOI:	10.1016/b978-1-4831-9852-1.50037-2
Popis:	Sputtering yields for poly crystalline semiconductor and metal targets under normally incident A + - ion bombardment were measured in the energy range from 30 to 800 eV. The measurements were made in a low pressure (2—5 μ ) high density argon plasma created in a demountable low voltage hot cathode discharge tube. The yields ( number of atoms removed/incident ion ) were determined by measuring the weight loss of spherical targets immersed like large negative Langmuir probes in the plasma. The yields are independent of gas pressure ( below p = 30 μ ), ion current density and target temperature. At 100 eV ion energy the yields range from 0.06 atoms/ion for Si to 0.6 atoms/ion for Ag. The curves are discussed in terms of the ion parameters.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::bd124a59f892cd7ccfdf97c077e6f950 https://doi.org/10.1016/b978-1-4831-9852-1.50037-2 Zobrazit plný text záznamu