Reliability investigation of the degradation of the surface passivation of InAlN/GaN HEMTs using a dual gate structure
| Autor: | Sylvain Delage, Marie-Antoinette di Forte-Poisson, Gottfried Strasser, Erhard Kohn, A. Alexewicz, Clemens Ostermaier, Peter Lagger, Dionyz Pogany, Patrick Herfurth, D. Maier, Mohammed Alomari |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
Dielectric strength Passivation business.industry Transistor Gate dielectric Electrical engineering Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Stress (mechanics) law Gate oxide Electrode Optoelectronics Electrical and Electronic Engineering Safety Risk Reliability and Quality business Layer (electronics) |
| Zdroj: | Microelectronics Reliability. 52:1812-1815 |
| ISSN: | 0026-2714 |
| DOI: | 10.1016/j.microrel.2012.06.006 |
| Popis: | We analyze the degradation of InAlN/GaN HEMTs using a secondary gate electrode placed on top of the SiN passivation layer in between the Schottky gate and drain contact. Although the actual transistor showed only minor degradation during the stress test under off-state bias for more than 60 h, a linear increase of trapped charges in the SiN layer has been detected starting at about 13 h of stress. The charge increase is correlated with the increased leakage current and dielectric breakdown at the secondary gate. |
| Databáze: | OpenAIRE |
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