Numerical analysis of SOI LDMOS using a recessed source and a trench drain

Autor:	S.-J Yoo, Sang-Koo Chung, Y.-I Choi, Sung Ho Kim
Rok vydání:	2000
Předmět:	LDMOS Engineering business.industry Numerical analysis General Engineering Electrical engineering Soi ldmos On resistance Trench MOSFET Optoelectronics Breakdown voltage business Voltage
Zdroj:	Microelectronics Journal. 31:963-967
ISSN:	0026-2692
DOI:	10.1016/s0026-2692(00)00094-x
Popis:	A new SOI LDMOS using a recessed source and a trench drain was proposed to improve the on-characteristics at a given breakdown voltage. On-resistance and breakdown voltages of the proposed LDMOS are investigated by the two-dimensional simulator, MEDICI. The simulation results show that the on-resistance of the proposed and the conventional LDMOS are 76.3 and 129.5 m Ω mm 2 , respectively. The on-resistance of the proposed LDMOS decreases by 41% compared to that of the conventional LDMOS at the same breakdown voltage of 36.5 V.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::bd08bfa7e0f66dc73a7c336ee16104c1 https://doi.org/10.1016/s0026-2692(00)00094-x Zobrazit plný text záznamu Full Text from ScienceDirect