| Autor: |
Ilja P. Soshnikov, Lolita G. Rotkina, Alexander V. Lunev, Michael E. Gaevski, Tatjana L. Makarova |
| Rok vydání: |
1998 |
| Předmět: |
|
| Zdroj: |
SPIE Proceedings. |
| ISSN: |
0277-786X |
| DOI: |
10.1117/12.309594 |
| Popis: |
The paper presents the attempt of the use of the C 60 thin films as a negativ electron beam resist. A comparative study of C 60 films polymerized by the He-Cd laser and electron beam is made. It is shown that under the exposure by laser irradiation of 2.8 eV polymerization begins from 10 4 and saturates at 10 5 photons per fullerene molecule, whereas total polymerization under the electron beam requires the dose of 0.1 C/cm 2 . Laser irradiated films obtained both in air and vacuum have porous structure with void fraction of 0.30 and 0.55 correspondingly and act as a host lattice for intercalated oxygen. Films polymerized by electron beam show higher polymerization degree as evidenced by ellipsometric measurements and Raman spectra. The research coducted shows that the fullerene material is to be a promising resist for the micro- and nano-pattern manufactoring. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
