Amorphous BeN as a new solid host for rare-earth-related luminescent materials

Autor:	Hugh H. Richardson, M. E. Kordesch, Antonio Ricardo Zanatta
Rok vydání:	2007
Předmět:	Photoluminescence Band gap Chemistry Sputtering Electron excitation Doping Analytical chemistry General Materials Science Nanotechnology Sputter deposition Thin film Condensed Matter Physics Amorphous solid
Zdroj:	physica status solidi (RRL) – Rapid Research Letters. 1:153-155
ISSN:	1862-6270 1862-6254
DOI:	10.1002/pssr.200701082
Popis:	Beryllium-nitride (BeN) thin films were prepared by sputtering a Be target in an atmosphere of pure nitrogen. The films were doped with samarium simply by placing a piece of Sm metal on the surface of the Be target. Under these deposition conditions the films present an amorphous structure and an optical bandgap of approx. 4 eV. They also exhibit visible light emission due to Sm3+ ions as a result of either photon or electron excitation. The present experimental results show that amorphous BeN films are suitable, and efficient, III-nitride hosts for rare-earth doping purposes. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
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