Fabrication of Ir-Based Electrodes by Metal Organic Chemical Vapor Deposition Using Liquid Ir Precursors
| Autor: | Naoya Iwamoto, Noriaki Oshima, Masaru Shimizu, Taishi Furukawa, Kazuhisa Kawano, S. Watari, Hironori Fujisawa |
|---|---|
| Rok vydání: | 2006 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) Thermal decomposition Inorganic chemistry General Engineering Analytical chemistry Nucleation General Physics and Astronomy chemistry.chemical_element Chemical vapor deposition Metal chemistry visual_art Electrode visual_art.visual_art_medium Iridium Metalorganic vapour phase epitaxy Tin |
| Zdroj: | Japanese Journal of Applied Physics. 45:7354-7359 |
| ISSN: | 1347-4065 0021-4922 |
| DOI: | 10.1143/jjap.45.7354 |
| Popis: | Ir-based electrodes were fabricated by metal organic chemical vapor deposition (MOCVD) using a newly developed liquid precursor, (ethylcyclopentadienyl)bis(ethylene) iridium [Ir(EtCp)(C2H4)2], with a lower decomposition temperature than previous precursors, (ethylcyclopentadienyl)(1,5-cyclooctadiene) iridium [Ir(EtCp)(COD)] and (ethylcyclopentadienyl)(1,3-cyclohexadiene) iridium [Ir(EtCp)(CHD)]. Film growth behavior during MOCVD using Ir(EtCp)(C2H4)2 was investigated and compared with that using Ir(EtCp)(COD) and Ir(EtCp)(CHD). When Ir(EtCp)(C2H4)2 was used, significantly higher nucleation was observed at the initial growth stage than that using Ir(EtCp)(COD) and Ir(EtCp)(CHD) owing to the lower thermal decomposition temperature of 220 °C. Ir, IrO2 and Ir/IrO2 films were successfully prepared using Ir(EtCp)(C2H4)2 on underlying SiO2, TiN and Pb(Zr,Ti)O3, showing that Ir-based top and bottom electrodes can be fabricated by MOCVD. The root-mean-square surface roughnesses and electrical resistivities of Ir and IrO2 films on SiO2 were 2.2 nm and 9.4 µΩcm, and 3.3 nm and 1.8×102 µΩcm, respectively. The step coverages of Ir films prepared at 230–400 °C were 35–45%. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|