High performance Ge-on-Si avalanche photodetector
| Autor: | Gyungock Kim, Jiho Joo, In Gyoo Kim, Ki-Seok Jang, Sun Ae Kim, Jin Hyuk Oh, Sanghoon Kim |
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| Rok vydání: | 2016 |
| Předmět: |
Silicon photonics
Materials science Silicon business.industry chemistry.chemical_element Photodetector 02 engineering and technology 021001 nanoscience & nanotechnology Avalanche photodiode 01 natural sciences 010309 optics Optics chemistry Single-photon avalanche diode 0103 physical sciences Optoelectronics Wafer 0210 nano-technology business |
| Zdroj: | Optical Interconnects XVI. |
| ISSN: | 0277-786X |
| Popis: | We present high performance vertical-illumination type Ge-on-Si avalanche photodetectors and photoreceiver modules operating up to 25 Gb/s. The Ge avalanche photodetectors were grown on a bulk-silicon wafer by RPCVD, and fabricated with CMOS-compatible process. The fabricated devices show a -3dB bandwidth greater than 13 GHz at operational biases (gain> 20) for λ ~ 1550 nm. The measured maximum gain-bandwidth (GB) product is ~ 493 GHz. Two types of Ge-on-Si APD receiver modules exhibit high sensitivities of better than –20.7 dBm for a 25 Gb/s operation at a BER = 10 -12 and λ ~ 1310 nm, and –27.75 dBm for a 10 Gb/s operation at a BER = 10 -12 and λ ~ 1550nm, respectively. |
| Databáze: | OpenAIRE |
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