Studying the formation of nitrogen δ-doped layers on GaAs(001) using reflection high-energy electron diffraction
| Autor: | Masahiko Kondow, Fumitaro Ishikawa, Norihisa Nishimoto |
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| Rok vydání: | 2014 |
| Předmět: |
Materials science
Process Chemistry and Technology Doping Surface finish Surfaces Coatings and Films Electronic Optical and Magnetic Materials Overlayer Faceting Crystallography Electron diffraction Chemical physics Monolayer Materials Chemistry Surface roughness Electrical and Electronic Engineering Instrumentation Surface reconstruction |
| Zdroj: | Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 32:02C121 |
| ISSN: | 2166-2754 2166-2746 |
| DOI: | 10.1116/1.4868522 |
| Popis: | The authors measured reflection high-energy electron diffraction patterns during the formation of nitrogen δ-doped layers on GaAs(001). The authors investigated the effects of nitrogen coverage, substrate temperature, and growth rate of the GaAs overlayer on the roughness, faceting, and strain state of the surface. During δ-doping, the authors observed coherently grown nitrogen-mediated surface reconstruction. The lattice of the GaAs overlayer expanded and shrank as it grew up to two monolayers, eventually recovering to a smooth surface. When the GaAs overlayer was grown on δ-doped layers with nitrogen coverage greater than 0.3 monolayers, it exhibited characteristic faceting, possibly caused by the presence of excess nitrogen adatoms. These behaviors were mostly identical for layers grown under both As4 and As2 overpressures. |
| Databáze: | OpenAIRE |
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