Strategies for Reducing Particle Defects in Ti and TiN Thin-Film Deposition Processes
| Autor: | Aditya Kumar, Bhavyen Patel, Isabelle Ferain, Olugbenga O. Famodu, J.-B. Laloë, Nirjhar Bhattacharjee |
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| Rok vydání: | 2019 |
| Předmět: |
0209 industrial biotechnology
Materials science business.industry Semiconductor device fabrication technology industry and agriculture chemistry.chemical_element 02 engineering and technology equipment and supplies Condensed Matter Physics Industrial and Manufacturing Engineering Electronic Optical and Magnetic Materials Atomic layer deposition 020901 industrial engineering & automation chemistry Physical vapor deposition Optoelectronics Deposition (phase transition) Particle Electrical and Electronic Engineering Thin film business Tin Lithography |
| Zdroj: | IEEE Transactions on Semiconductor Manufacturing. 32:48-53 |
| ISSN: | 1558-2345 0894-6507 |
| Popis: | Generation of particle defects in semiconductor manufacturing is inevitable, but it has to be minimized to enhance IC yield. There are various causes for the generation of particle defects in different semiconductor manufacturing processes, such as diffusion, thin-film deposition, lithography, etch, and clean. In this paper, primary defect generation mechanisms in thin-film deposition processes, such as atomic layer deposition TiN, radio frequency physical vapor deposition Ti, and physical vapor deposition TiN, are discussed. Various strategies, such as periodic clean optimization, on-load clean, idle pasting, periodic pasting optimization, kit life optimization, target burning optimization, and kit hardware selection that reduce the generation of defects in the thin-film deposition processes are presented. This paper also discusses hardware-induced surface defect and solutions to reduce them. |
| Databáze: | OpenAIRE |
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