| Autor: |
Antoni Rogalski, Jaroslaw Rutkowski, Jakub Wenus |
| Rok vydání: |
2001 |
| Předmět: |
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| Zdroj: |
Photodetectors: Materials and Devices VI. |
| ISSN: |
0277-786X |
| Popis: |
In the paper the performance of P-on-n double-layer heterojunction HgCdTe photodiodes are temperature 77 K is analyzed theoretically. Calculation has been performed for the backside-illuminated configuration. The effect of photodiode base layer geometry on quantum efficiency and R0A product is analyzed. The effect of lateral collection of diffusion current and photocurrent on photodiode parameters is also shown. Moreover the dependence of the p-n junction position within heterostructure on the band-gap energy profiles and photodiode performance is presented. Finally, the influence of the composition gradient and p- side doping concentration on photodiode parameters is described briefly.© (2001) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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