Graded Index at the TCO/p Interface for Silicon Thin Film Solar Cells Using Nb Doped TiO2
| Autor: | Antony, A., Lluscà, M., Rojas Tarazona, F., Morrone, L., Caballero, A., Asensi, J.M., Andreu, J., Bertomeu, J. |
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| Jazyk: | angličtina |
| Rok vydání: | 2014 |
| Předmět: | |
| DOI: | 10.4229/eupvsec20142014-3dv.4.32 |
| Popis: | 29th European Photovoltaic Solar Energy Conference and Exhibition; 1941-1943 The optical reflection losses at the transparent conducting oxide/a-Si p-layer interface in superstrate thin film silicon solar cells can be reduced by introducing a TCO having intermediate refractive index value. Nb doped TiO2 (NTO) with refractive index 2.5 to 2.8 in the visible wavelength range was used to form a graded index structure at the TCO/p-layer interface. The optimum thickness of the NTO layer to reduce the reflection losses was found to be around 30 nm. Thin layers of NTO show high optical transmission above 80%, a band gap of 3.62 eV and a resistivity of 2×10-3 Ω·cm. NTO layers of 20, 30 and 40 nm have been deposited over flat FTO and Asahi U substrates, and amorphous silicon thin film solar cells were fabricated over this graded TCO stack. The cells over the flat FTO showed an increase in Voc values when intermediate NTO layer was used. An increase in Jsc value was also observed for cells with NTO over Asahi U substrate. |
| Databáze: | OpenAIRE |
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