Chemical etching of (100) and (110) faces of flux-grown LaBO3 crystals
| Autor: | B.M. Wanklyn, Ashok K. Razdan, Anima Jain, P. N. Kotru |
|---|---|
| Rok vydání: | 1995 |
| Předmět: |
Chemistry
Passivity Analytical chemistry General Physics and Astronomy chemistry.chemical_element Surfaces and Interfaces General Chemistry Condensed Matter Physics Isotropic etching Surfaces Coatings and Films Crystal Crystallography Flux (metallurgy) Resist Etching (microfabrication) Dislocation Boron |
| Zdroj: | Applied Surface Science. 84:65-73 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/0169-4332(94)00289-4 |
| Popis: | Experiments on the etching of (100) and (110) faces of LaBO 3 crystal surfaces are offered. The results reveal HNO 3 to be a dislocation etchant for both LaBO 3 crystal faces. It is shown that the shape of the etch pits due to HNO 3 is different for different habit faces. The dependence of the etch rates for (100) and (110) faces (lateral as well as vertical) on the concentrations and temperature of the etchant, are described and discussed. It is shown that the faces resist attack of the etchant in the direction of the normal to the surface after 2 h of etching irrespective of the concentration of the etchant used at different temperatures. It is further shown that till the time the passivity sets in, the variation of depth with etching time is linear in all the cases. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect