High Temperature Characterization of 4H-SiC Bipolar Junction Transistors

Autor:	Sumi Krishnaswami, Anant Agarwal, James Richmond, Craig Capell, Sei Hyung Ryu, John Palmour, Bruce Geil, Dimos Katsis, Charles J. Scozzie
Rok vydání:	2006
DOI:	10.4028/0-87849-425-1.1437
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::bc8dae82691881f68a361105d026a775 https://doi.org/10.4028/0-87849-425-1.1437 Zobrazit plný text záznamu