Submicrometre elevated source and drain MOSFET technology using E-beam evaporated silicon

Autor:	S.H. Goodwin-Johansson, M.R. Mirabedini, Hisham Z. Massoud
Rok vydání:	1997
Předmět:	Materials science Silicon business.industry Doping chemistry.chemical_element Short-channel effect Nanotechnology Ultra large scale integration Electron beam physical vapor deposition chemistry MOSFET Electron beam processing Optoelectronics Electrical and Electronic Engineering business
Zdroj:	Electronics Letters. 33:1183
ISSN:	0013-5194
DOI:	10.1049/el:19970776
Popis:	A self-aligned MOSFET structure with elevated source and drain was fabricated using electron beam evaporation of silicon. This technology allows the realisation of defect-free junctions as shallow as 200 /spl Aring/ without preamorphisation, source/drain and gate regions doped in one implantation step and without a selective growth process, and source/drain regions with minimum areas and reduced junction capacitances.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::bc7f4e8bd8915edef59ab7eebbf5cfaa https://doi.org/10.1049/el:19970776 Zobrazit plný text záznamu