Analysis of Etched CdZnTe Substrates
| Autor: | R. N. Jacobs, Priyalal Wijewarnasuriya, C. M. Lennon, J. K. Markunas, Andrew J. Stoltz, L. O. Bubulac, J. M. Arias, Jeffrey M. Peterson, Kelly A. Jones, D. D. Lofgreen, M. Reddy, M. Jaime-Vasquez, J. D. Benson, P. J. Smith, L. A. Almeida, Scott M. Johnson |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Solid-state physics Analytical chemistry Polishing 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials Impurity 0103 physical sciences Materials Chemistry Wafer Electrical and Electronic Engineering 0210 nano-technology Molecular beam epitaxy |
| Zdroj: | Journal of Electronic Materials. 45:4502-4510 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-016-4642-y |
| Popis: | State-of-the-art as-received (112)B CdZnTe substrates have been examined for surface impurity contamination and polishing residue. Two 4 cm × 4 cm and one 6 cm × 6 cm (112)B state-of-the-art as-received CdZnTe wafers were analyzed. A maximum surface impurity concentration of Al = 1.7 × 1015 atoms cm−2, Si = 3.7 × 1013 atoms cm−2, Cl = 3.12 × 1015 atoms cm−2, S = 1.7 × 1014 atoms cm−2, P = 1.1 × 1014 atoms cm−2, Fe = 1.0 × 1013 atoms cm−2, Br = 1.2 × 1014 atoms cm−2, and Cu = 4 × 1012 atoms cm−2 was observed on the as-received CdZnTe wafers. CdZnTe particulates and residual SiO2 polishing grit were observed on the surface of the as-received (112)B CdZnTe substrates. The polishing grit/CdZnTe particulate density on CdZnTe wafers was observed to vary across a 6 cm × 6 cm wafer from ∼4 × 107 cm−2 to 2.5 × 108 cm−2. The surface impurity and damage layer of the (112)B CdZnTe wafers dictate that a molecular beam epitaxy (MBE) preparation etch is required. The contamination for one 4 cm × 4 cm and one 6 cm × 6 cm CdZnTe wafer after a standard MBE Br:methanol preparation etch procedure was also analyzed. A maximum surface impurity concentration of Al = 2.4 × 1015 atoms cm−2, Si = 4.0 × 1013 atoms cm−2, Cl = 7.5 × 1013 atoms cm−2, S = 4.4 × 1013 atoms cm−2, P = 9.8 × 1013 atoms cm−2, Fe = 1.0 × 1013 atoms cm−2, Br = 2.9 × 1014 atoms cm−2, and Cu = 5.2 × 1012 atoms cm−2 was observed on the MBE preparation-etched CdZnTe wafers. The MBE preparation-etched surface contamination consists of Cd(Zn)Te particles/flakes. No residual SiO2 polishing grit was observed on the (112)B surface. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink