Roles of hydrogen dilution on the microstructural and optoelectronic properties of B-doped nanocrystalline Si:H thin films
| Autor: | W. S. Wei, H. Chen, W. Z. Shen, M. H. Gullanar, R. Q. Cui |
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| Rok vydání: | 2004 |
| Předmět: |
Materials science
Hydrogen business.industry Nanocrystalline silicon Analytical chemistry General Physics and Astronomy chemistry.chemical_element Chemical vapor deposition Conductivity Nanocrystalline material Elastic recoil detection Condensed Matter::Materials Science Crystallinity chemistry Optoelectronics Physics::Atomic Physics Thin film business |
| Zdroj: | Journal of Applied Physics. 95:3961-3967 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.1664028 |
| Popis: | We report on the roles of hydrogen dilution on the microstructural and optoelectronic properties of boron-doped nanocrystalline silicon thin films grown by plasma-enhanced chemical vapor deposition on glass substrates, through x-ray diffraction, scanning electron microscope, Raman scattering, optical transmission, temperature-dependent dark conductivity, and elastic recoil detection analysis (ERDA) measurements. The grain size, crystallinity, absorption coefficient, refractive index, and conductivity are found to decrease basically with increasing hydrogen dilution ratio ΔH. The Tauc’s optical band gap is found to increase with ΔH due to the quantum size effect. By the aid of hydrogen ion bombardment effect [J. Appl. Phys. 93, 1262 (2003)] as well as the hydrogen-induced annealing effect, the clear increase of hydrogen content with ΔH and the different hydrogen distribution from ERDA help us to elucidate the correlation of hydrogen dilution with the crystallinity and grain size. The argument has been furt... |
| Databáze: | OpenAIRE |
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