Preparation and Grid Optimization of Photosensitive Gate GaN Based HEMT Devices

Autor:	朱彦旭 Zhu Yan-xu, 李赉龙 Li Lai-long, 杨 壮 Yang Zhuang, 杨 忠 Yang Zhong, 宋会会 Song Hui-hui, 石 栋 Shi Dong, 白新和 Bai Xin-he
Rok vydání:	2019
Předmět:	Radiation Materials science business.industry Grid optimization Optoelectronics High-electron-mobility transistor Condensed Matter Physics business Electronic Optical and Magnetic Materials
Zdroj:	Chinese Journal of Luminescence. 40:311-31
ISSN:	1000-7032
DOI:	10.3788/fgxb20194003.0311
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::bc605e0aa546d5be81ee74501de7cf09 https://doi.org/10.3788/fgxb20194003.0311 Zobrazit plný text záznamu