Al/Si(100) Schottky barrier formation using nozzle jet beam deposition

Autor:	J. Wong, S.-N. Mei, Toh-Ming Lu
Rok vydání:	1987
Předmět:	Materials science Physics and Astronomy (miscellaneous) Silicon Annealing (metallurgy) Schottky barrier Nozzle Analytical chemistry Schottky diode chemistry.chemical_element Molecular physics Ion chemistry Ionization Diode
Zdroj:	Applied Physics Letters. 50:679-681
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.98064
Popis:	High Schottky barrier height of φb=0.77 eV for Al/n‐Si was obtained by the nozzle jet beam deposition method in a conventional vacuum condition without post‐annealing. Previously, this high barrier height was only observable in the vacuum cleaved or sputter‐etched samples in an ultrahigh vacuum condition. The Schottky barrier height was reduced if a partially ionized jet beam with 0.1% ions was used in the deposition process and if a bias of ≥0.5 kV was applied to the substrate. The reduction of the Schottky barrier height is attributed to the surface damage caused by the energetic ion bombardment. It is shown that a high barrier height (≂0.8 eV) and a low leakage current were retained after a relatively low‐temperature (≂450 °C) annealing process if the applied bias was ≤1 kV.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::bc58cb317c8cf5772e59bdeb3bfdc7f1 https://doi.org/10.1063/1.98064 Zobrazit plný text záznamu