Evaluation of the Chemical-mechanical Planarization (CMP) Performance of Silicon Nitride and Silicon Carbide as Hard Mask Materials for Cu-based Interconnect Technology

Autor:	Sanjit K. Das, Jia Lee, Glenn A. Biery, Ronald D. Goldblatt, John A. Fitzsimmons, Wei-Tsu Tseng, Edward Barth
Rok vydání:	2002
Předmět:	chemistry.chemical_compound Materials science chemistry Silicon nitride Chemical-mechanical planarization Silicon carbide Interconnect technology Nanotechnology Hard mask
Zdroj:	MRS Proceedings. 732
ISSN:	1946-4274 0272-9172
Popis:	Hydrogenated silicon nitride, hydrogenated silicon carbide, and their intermediates were chemo-mechanically polished. Results showed that, within the material set examined, harder materials also have higher CMP removal rates. In addition, CMP rates for multilayer stacks did not follow those for single layers. Polish mechanisms were proposed to explain these phenomena.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::bc4aa96b62ffd38cce1e5a216382b474 https://doi.org/10.1557/proc-732-i1.7 Zobrazit plný text záznamu Full text from SpringerLink