Fast and slow lifetime degradation in boron-doped Czochralski silicon described by a single defect
| Autor: | Tine Uberg Nærland, Brett Hallam, Malcolm Abbott, Stuart Wenham |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
education.field_of_study Materials science Silicon Annealing (metallurgy) Population chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Kinetic energy 01 natural sciences law.invention Chemical species chemistry Chemical physics law 0103 physical sciences General Materials Science Wafer 0210 nano-technology Boron education Czochralski process |
| Zdroj: | physica status solidi (RRL) - Rapid Research Letters. 10:520-524 |
| ISSN: | 1862-6254 |
| DOI: | 10.1002/pssr.201600096 |
| Popis: | A demonstration that boron–oxygen related degradation in boron-doped Czochralski silicon could be caused by a single defect with two trap energy levels is presented. In this work, the same two-level defect can describe the fast and slow lifetime decay with a capture cross-section ratio of electrons and holes for the donor level of σn/σp = 19 ± 4. A model is proposed for the multi-stage degradation involving a single defect, in which the product of the slow reaction is a reactant in the fast reaction. After thermal processing, a population of interstitial oxygen (Oi) exists in a certain state (the precursor state) that can rapidly form defects (fast degradation) and another population of Oi exists in a state that is required to undergo a slow transformation into the precursor state before defect formation can proceed (slow degradation). Kinetic modelling is able to adequately reproduce the multi-stage degradation for experimental data. Dark annealing is also shown to impact the extent of ‘fast’ degradation. By decreasing the dark annealing time on pre-degraded wafers, a more severe ‘fast’ degradation of the samples can be enabled during subsequent illumination, consistent with this theory. The paper then discusses possible candidates for the chemical species involved. (© 2016 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim) |
| Databáze: | OpenAIRE |
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