High-Performance In0.75Ga0.25As Implant-Free n-type MOSFETs for Low Power Applications

Autor:	Asen Asenov, Karol Kalna, Jason S. Ayubi-Moak
Rok vydání:	2009
Předmět:	Materials science business.industry Monte Carlo method Transistor Electrical engineering Power (physics) Gallium arsenide law.invention chemistry.chemical_compound CMOS chemistry law Logic gate Low-power electronics MOSFET Optoelectronics business
Zdroj:	2009 Spanish Conference on Electron Devices.
DOI:	10.1109/sced.2009.4800438
Popis:	The performance of implant-free (IF), n-type III-V MOSFETs with an In 0.75 Ga 0.25 As channel have been evaluated using a 2D finite-element Monte Carlo device simulator. We investigate the device performance of a set of scaled transistors with gate lengths of 30, 20 and 15 nm at a drain bias of 0.5 V to determine whether this novel architecture can deliver high drain current at low bias conditions required for high-performance CMOS applications.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::bc3e31cf70066207e9ccd9dbb5952e5e https://doi.org/10.1109/sced.2009.4800438 Zobrazit plný text záznamu