Impact of H2-preannealing of the Sapphire Substrate on the Crystallization of Low-Temperature-Deposited AlN Buffer Layer

Autor:	Hiroshi Amano, Motoaki Iwaya, Krishnan Balakrishnan, Satoshi Kamiyama, Isamu Akasaki, Michinobu Tsuda
Rok vydání:	2004
Předmět:	Crystallinity Materials science business.industry law Vapor phase Optoelectronics Sapphire substrate Crystallization business Epitaxy Layer (electronics) Buffer (optical fiber) law.invention
Zdroj:	MRS Proceedings. 831
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-831-e8.30
Popis:	The effect of H2-preannealing of sapphire substrate on low-temperature (LT- ) AlN buffer layer deposited by metalorganic vapor phase epitaxy is investigated. Crystallinity of LT-AlN drastically changes with preannealing temperature variation. It is found that H2-preannealing of sapphire substrate is a requisite to get a better quality LT-AlN and as a consequence it leads to growth of better quality GaN epi-layer on it.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::bc20e120a50678d98cc481b0c7826509 https://doi.org/10.1557/proc-831-e8.30 Zobrazit plný text záznamu Full text from SpringerLink