Temperature Dependence of Magnetoresistance and Hall Effect for Ho Doped n-Type InSe
| Autor: | Aytunç Ateş, Seydi Doğan, Muhammet Yildirim, C Coşkun, Bekir Gürbulak, Y.K. Yoğurtçu |
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| Rok vydání: | 2000 |
| Předmět: | |
| Zdroj: | Physica Scripta. 62:92-96 |
| ISSN: | 1402-4896 0031-8949 |
| DOI: | 10.1238/physica.regular.062a00092 |
| Popis: | Magnetoresistance and Hall effect measurements were carried out for Ho doped n-InSe (n-InSe:Ho) sample in the temperature range 10–340 K, in which the sample exhibits transverse magnetoresistance (MJ⊥B) and longitudinal magnetoresistance (MJ//B) effect. The fit to a temperature power law T - β gives MJ⊥B ∝ T - 1.07 and MJ//B ∝ T - 1.11 in the range 10–340 K for n-InSe:Ho. The transverse magnetoresistance coefficient of InSe:Ho in the temperature range 10–340 K is much greater than that of the reference n-InSe sample. As the temperature increases, the carrier concentration in the n-InSe:Ho sample increases between 10–340 K. Impurity energy levels calculated from ln(p/T 3/2) vs 103/T plot for n-InSe:Ho in the range 10–40 K, 40–240 K and 260–340 K are Ec-69 meV, Ec-264 meV and Ec-568 meV, respectively. The electron Hall mobility of the n-InSe:Ho sample decreases, as µH ∝ T - 2.35 for 140–340 K. The Hall mobility and the carrier concentration of the n-InSe:Ho sample increase with increasing temperature in the range 10–340 K. |
| Databáze: | OpenAIRE |
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