A silicon-diode-based infrared thermal detector array
| Autor: | Yong-Ping Xu, Ruey-Shing Huang, Graham A. Rigby |
|---|---|
| Rok vydání: | 1993 |
| Předmět: |
Materials science
Cantilever business.industry Bolometer Metals and Alloys Condensed Matter Physics Noise-equivalent temperature Thermopile Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Surface micromachining Responsivity law Optoelectronics Infrared detector Electrical and Electronic Engineering business Instrumentation Diode |
| Zdroj: | Sensors and Actuators A: Physical. :226-230 |
| ISSN: | 0924-4247 |
| DOI: | 10.1016/0924-4247(93)80039-j |
| Popis: | A new silicon-diode-based infrared thermal detector array (1 × 4) has been developed. The silicon diode, as a temperature-sensing device, is built on a thin cantilever structure that is formed by micromachining. The thickness of the cantilever is about 5 μm. A thin layer of bismuth is evaporated on the cantilever as an infrared radiation absorber. With a cantilever measuring 264 μm × 112 pm × 5 gm and an active area measuring 102 μm × 102 μm, the fabricated detector array yields a responsivity of 5.3 V/W, a detectivity of 2.7 × 10 7 cm Hz 1/2 /W, and a noise equivalent temperature difference (NETD) of 1.7 °C. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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