Analyses of silicon wafers by a high-resolution secondary ion mass spectrometer

Autor:	Hitoshi Tsuyama, Shunroku Taya, Ichiro Kanomata, Michio Suzuki
Rok vydání:	1978
Předmět:	Secondary ion mass spectrometry Silicon chemistry Resolution (mass spectrometry) Analytical chemistry chemistry.chemical_element Wafer Mass spectrometry Boron Spectroscopy Hybrid mass spectrometer Ion
Zdroj:	International Journal of Mass Spectrometry and Ion Physics. 27:63-76
ISSN:	0020-7381
DOI:	10.1016/0020-7381(78)80103-x
Popis:	A high-resolution secondary ion mass spectrometer (SIMS) was constructed for solid surface analyses. The instrument is composed of a Hitachi IMA-2 ion probe and a stigmatic, second-order, double focusing mass spectrometer. Commercially available silicon wafers (p-type, 20 Ω cm) were analyzed as test samples. The highest mass resolving power was 11,000 (10% valley). The analytical sensitivity of this SIMS permits detection of boron to silicon at an ion ratio of 10 −7 . The inorganic and hydrocarbon element ions were accurately resolved.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::bc12132de14f73ad18a9c3cf04174948 https://doi.org/10.1016/0020-7381(78)80103-x Zobrazit plný text záznamu