High-temperature reverse bias characteristics of highly reliable GaN MOS-HFET

Autor:	Shinichi Hoshi, Masaaki Kuzuhara, Kensuke Hata, Youngshin Eum, Kazuki Arakawa
Rok vydání:	2019
Předmět:	Materials science Physics and Astronomy (miscellaneous) business.industry Reverse bias General Engineering General Physics and Astronomy Optoelectronics business
Zdroj:	Japanese Journal of Applied Physics. 58:076504
ISSN:	1347-4065 0021-4922
DOI:	10.7567/1347-4065/ab264f
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::bc1015139d8dbc9faa729e1710770d04 https://doi.org/10.7567/1347-4065/ab264f Zobrazit plný text záznamu