Plasma-chemical synthesis of silicon carbonitride films from trimethyl(diethylamino)silane
| Autor: | L. I. Chernyavskii, M. G. Voronkov, V. G. Kesler, E. A. Maximovskii, L. D. Nikulina, Fedor A. Kuznetsov, Yu. M. Rumyantsev, N. I. Fainer, V. I. Rakhlin, Marina Kosinova |
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| Rok vydání: | 2010 |
| Předmět: |
Materials science
Silicon Analytical chemistry Infrared spectroscopy chemistry.chemical_element Chemical vapor deposition Condensed Matter Physics Silane chemistry.chemical_compound Chemical engineering chemistry X-ray photoelectron spectroscopy Ellipsometry Plasma-enhanced chemical vapor deposition Materials Chemistry Ceramics and Composites Thin film |
| Zdroj: | Glass Physics and Chemistry. 36:497-505 |
| ISSN: | 1608-313X 1087-6596 |
| DOI: | 10.1134/s1087659610040152 |
| Popis: | Silicon carbonitride films of different compositions have been synthesized by plasma-enhanced chemical vapor deposition with the use of trimethyl(diethylamino)silane as the initial compound. The conditions used for the deposition of the films have been chosen from the thermodynamic modeling. The properties of the films prepared have been investigated using ellipsometry, scanning electron microscopy, X-ray photoelectron spectroscopy, IR spectroscopy, and synchrotron X-ray powder diffraction. It has been established that the synthesis temperature substantially affects the kinetics of growth and physicochemical properties of silicon carbonitride layers in the range of synthesis conditions under investigation. The films prepared consist of nanoparticles whose size increases with increasing synthesis temperature. The refractive index of the films increases from 1.6 to 2.8 with an increase in the temperature. |
| Databáze: | OpenAIRE |
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