MBE growth optimization of topological insulator Bi2Te3 films

Autor:	J. Krumrain, Detlev Grützmacher, Svetlana Borisova, Claus M. Schneider, Lukasz Plucinski, Toma Stoica, Gregor Mussler
Rok vydání:	2011
Předmět:	Condensed matter physics Chemistry Substrate (electronics) Condensed Matter Physics Epitaxy Inorganic Chemistry X-ray reflectivity Crystallography X-ray photoelectron spectroscopy Topological insulator Materials Chemistry Charge carrier Thin film Molecular beam epitaxy
Zdroj:	Journal of Crystal Growth. 324:115-118
ISSN:	0022-0248
DOI:	10.1016/j.jcrysgro.2011.03.008
Popis:	We investigated the growth of the topological insulator Bi 2 Te 3 on Si(1 1 1) substrates by means of molecular-beam epitaxy (MBE). The substrate temperature as well as the Bi and Te beam-equivalent pressure (BEP) was varied in a large range. The structure and morphology of the layers were studied using X-ray diffraction (XRD), X-ray reflectivity (XRR) and atomic force microscopy (AFM). The layer-by-layer growth mode with quintuple layer (QL) as an unit is accomplished on large plateaus if the MBE growth takes place in a Te overpressure. At carefully optimized MBE growth parameters, we obtained atomically smooth, single-crystal Bi 2 Te 3 with large area single QL covering about 75% of the layer surface. Angular-resolved photoelectron spectroscopy reveals a linear energy dispersion of charge carriers at the surface, evidencing topologically insulating properties of the Bi 2 Te 3 epilayers.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::bc014d27729c014c8a35d0fb65888516 https://doi.org/10.1016/j.jcrysgro.2011.03.008 Zobrazit plný text záznamu Full Text from ScienceDirect