Identification of impurities in GaAs by the magneto‐optical photoluminescent spectroscopy technique

Autor:	E. B. Smith, D. C. Reynolds, C. W. Litton, P. C. Colter
Rok vydání:	1984
Předmět:	Crystal Photoluminescence Materials science Silicon chemistry Impurity Exciton Doping Analytical chemistry General Physics and Astronomy chemistry.chemical_element Germanium Spectroscopy
Zdroj:	Journal of Applied Physics. 55:1610-1613
ISSN:	1089-7550 0021-8979
Popis:	Three residual donors (Si, S, Ge) and three residual acceptors (Ge, C, Zn) have been identified simultaneously in a p‐type GaAs crystal. The donors were identified by the magneto‐optical photoluminescent spectroscopy technique. The Si donor has also been identified by the same technique in a relatively heavily doped sample (∼5×1015 cm−3) of GaAs. A residual S donor has also been identified in still another Si‐doped sample. These results demonstrate the versatility of the photoluminescence technique for materials characterization.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::bbe47354f3580ba53eb1e94e591347a2 https://doi.org/10.1063/1.333422 Zobrazit plný text záznamu