Photonic crystals for highly efficient silicon single junction solar cells
Autor: | Jan Krügener, Robby Peibst, Sascha J. Wolter, Michael Rienäcker, S. John, H. J. Osten, M. Sanchez, Sören Schäfer, Rolf Brendel |
---|---|
Rok vydání: | 2021 |
Předmět: |
Materials science
Passivation Silicon Renewable Energy Sustainability and the Environment business.industry chemistry.chemical_element Substrate (electronics) Ray Surfaces Coatings and Films Electronic Optical and Magnetic Materials Solar cell efficiency chemistry Photovoltaics Optoelectronics business Pyramid (geometry) Photonic crystal |
Zdroj: | Solar Energy Materials and Solar Cells. 233:111337 |
ISSN: | 0927-0248 |
DOI: | 10.1016/j.solmat.2021.111337 |
Popis: | The maximum achievable silicon single junction solar cell efficiency is limited by intrinsic recombination and by its limited capability of absorbing sun light. For Lambertian light trapping the maximum theoretical solar cell efficiency is around 29.5%. Recently a new approach for light trapping has been proposed for silicon photovoltaics. Highly regular structures with a size in the range of the wavelengths of the incident light act as so-called photonic crystals. Such structures allow wave-interference light trapping beyond the Lambertian limit. Applying these photonic crystals to silicon solar cells can help to reduce the absorber thickness and thus to minimizing the unavoidable intrinsic recombination. From a simulation study, we can conclude that 31.6% is the maximum possible single junction solar cell efficiency for a 15 μm-thin substrate. Furthermore, we present a process flow for the preparation of regular inverted pyramid structure, that acts as photonic crystal. Finally, regular inverted pyramid structures are prepared on polished and shiny-etched, i. e. on surfaces with a certain roughness, substrates. Surface passivation of these structured surfaces shows as good lifetimes as on conventional randomly pyramid textured surface. Excellent total saturation current densities on asymmetric samples of 4 ± 2 fA/cm2 for n-type and of 4.5 ± 2.2 fA/cm2 on p-type substrates are obtained. |
Databáze: | OpenAIRE |
Externí odkaz: |