First-principles investigation on electronic structure, magnetic states and optical properties of Mn-doped SnS2 monolayer via strain engineering
Autor: | Fazal Kabir, Ismail Shahid, Iftikhar Ahmad, Majeed Ur Rehman, Jian-Min Zhang, Anwar Ali, Iqtidar Ahmad, Iltaf Muhammad |
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Rok vydání: | 2021 |
Předmět: |
Materials science
Spintronics Magnetic moment Condensed matter physics 02 engineering and technology Electronic structure Classical Heisenberg model 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics 0104 chemical sciences Electronic Optical and Magnetic Materials Strain engineering Atom Monolayer Curie temperature 0210 nano-technology |
Zdroj: | Physica E: Low-dimensional Systems and Nanostructures. 134:114842 |
ISSN: | 1386-9477 |
DOI: | 10.1016/j.physe.2021.114842 |
Popis: | Two-dimensional magnetic materials are high desirable for realizing advanced optoelectronic and spintronic devices. In this paper, we report systematic studies the effects of strain on the electronic structure, magnetic states and optical properties of Mn-doped SnS 2 monolayer (ML) by means of first-principles calculations. Ab-initio molecular dynamics simulations and formation energy reveal that the Mn-doped SnS2 ML is stable at 500 K and can be fabricated under the S-rich condition. The substitution of a Mn for a Sn atom induces 3 μB magnetic moment in nonmagnetic SnS 2 ML, which is consistent with the Hund's rule and Aufbau principle. Based on classical Heisenberg model and mean-field approximation the Curie temperature is calculated to be 476.13 K. Due to symmetry reserved crystal structure, the net magnetic moment of Mn-doped SnS 2 ML is robust even if considerable strains (−10 to 10%) are applied. The blue-shift and red-shift of the absorption peaks are observed in the optical spectrum by biaxial compressive and tensile strains . The biaxial strain effectively improves the optical properties of Mn-doped SnS 2 ML, particularly in the visible light region. This study provide useful guidance for practical application in magnetic and optoelectronic devices . |
Databáze: | OpenAIRE |
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