Semiconductor parameters of Bi2Te3 single crystal
| Autor: | H.T. Shaban, M. S. El-Sadek, M.M. Nassary |
|---|---|
| Rok vydání: | 2009 |
| Předmět: |
Materials science
Condensed matter physics business.industry Condensed Matter Physics Thermal conduction Crystal Semiconductor Electrical resistivity and conductivity Condensed Matter::Superconductivity Seebeck coefficient General Materials Science Diffusion (business) Anisotropy business Single crystal |
| Zdroj: | Materials Chemistry and Physics. 113:385-388 |
| ISSN: | 0254-0584 |
| DOI: | 10.1016/j.matchemphys.2008.07.106 |
| Popis: | Single crystals of Bi2Te3 were prepared by a modified Bridgman method. The as-prepared Bi2Te3 was investigated by X-ray diffraction (XRD). Anisotropic phenomena in the layered Bi2Te3 crystal was investigated. The measurements showed that the electrical conductivity, Hall mobility and Seebeck coefficient (TEP) have anisotropic nature. From these measurements type of conduction and several physical parameters such as diffusion coefficients, diffusion lengths, and effective masses of carriers were estimated. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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