A statistical barrier model of crystal growth

Autor:	J.C. Brice, I.M. Coe, T.L. Tansley
Rok vydání:	1975
Předmět:	Supersaturation business.industry Chemistry Schottky diode Crystal growth Penetration (firestop) Condensed Matter Physics Inorganic Chemistry Crystallography Semiconductor Chemical physics Materials Chemistry Molecule Growth rate business Thermal energy
Zdroj:	Journal of Crystal Growth. 30:367-370
ISSN:	0022-0248
DOI:	10.1016/0022-0248(75)90014-7
Popis:	Many known crystal growth mechanisms apparently involve an energy barrier which limits the incorporation of individual molecules into the solid. It has previously been assumed that molecules could only be incorporated in the crystal if they had sufficient thermal energy to pass over the barrier. However, it is also possible that such barriers may have an energy dependent probability of penetration. By using the analogy with Schottky barriers in semiconductors this paper shows that some of the available data is consistent with a mechanism of this type. The cases found involve complex molecules and it is suggested that the growth rate versus temperature and supersaturation characteristics may be the result of the need to have the molecules in the correct orientation before they can be incorporated in the crystal.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::bbb9d82b35e16cb0d0c32d3d84b3b36e https://doi.org/10.1016/0022-0248(75)90014-7 Zobrazit plný text záznamu