Forming-Free TaOxBased RRAM Device with Low Operating Voltage and High On/Off Characteristics

Autor:	B. B. Weng, Victor Yi-Qian Zhuo, Y. Jiang, Chun Chia Tan, Minghua Li, Wei He, Zheng Fang
Rok vydání:	2015
Předmět:	Materials science business.industry Optoelectronics Operating voltage business Electronic Optical and Magnetic Materials Resistive random-access memory
Zdroj:	ECS Journal of Solid State Science and Technology. 4:N137-N140
ISSN:	2162-8777 2162-8769
DOI:	10.1149/2.0101512jss
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::bbb8327258404a96abcf9bca6935734a https://doi.org/10.1149/2.0101512jss Zobrazit plný text záznamu