A 130 mV SRAM With Expanded Write and Read Margins for Subthreshold Applications

Autor:	Meng-Fan Chang, Po-Wei Chou, Shi-Wei Chang, Wei-Cheng Wu
Rok vydání:	2011
Předmět:	Random access memory Engineering business.industry Subthreshold conduction Transistor Electrical engineering Thyristor Write margin Threshold voltage law.invention law Electronic engineering Static random-access memory Electrical and Electronic Engineering business Voltage
Zdroj:	IEEE Journal of Solid-State Circuits. 46:520-529
ISSN:	1558-173X 0018-9200
Popis:	SRAM suffers read-disturb and write failures at a low supply voltage, especially at deep subthreshold operation. This study proposes a 9T-SRAM cell with a data-aware-feedback-cutoff (DAFC) scheme to enlarge the write margin and dynamic-read-decoupled (DRD) scheme to prevent read-disturb for achieving deep subthreshold operation. A 30 mV negative-pumped wordline scheme is employed to suppress bitline leakage current. The fabricated 90 nm 32 Kb 9T-SRAM macro achieves 130 mV VDDmin. All the 32 Kb 9T cells are stable across read and write operations when operated at 105 mV.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::bbb7b7371b5d0cf19137f318b78436dd https://doi.org/10.1109/jssc.2010.2091321 Zobrazit plný text záznamu