Ni-Silicided Deep Source/Drain Junctions Formed by Solid Phase Epitaxial Regrowth

Autor:	Anne Lauwers, Muriel de Potter, Bartek Pawlak, Amal Akheyar, Karen Maex, Richard Lindsay, Simone Severi, Kirklen Henson
Rok vydání:	2004
Předmět:	Materials science Dopant business.industry Phase (matter) Junction leakage Contact resistance Optoelectronics High activation business Epitaxy
Zdroj:	MRS Proceedings. 810
ISSN:	1946-4274 0272-9172
Popis:	Making use of SPER (Solid Phase Epitaxial Regrowth) As and B deep source/drain junctions with high activation can be obtained at temperatures below 700°C. However, higher thermal budget is required to regrow and activate the dopants in the poly gates. Low junction leakage and low contact resistance can be obtained for Ni-silicided As and B SPER junctions making use of deep As and B implants. Because of the low thermal budget source/drain junctions obtained by SPER are an attractive alternative to conventional spike annealed junctions for technologies making use of metal gates.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::bb980284117ad8751a1a1f8b36e8ac3d https://doi.org/10.1557/proc-810-c2.2 Zobrazit plný text záznamu Full text from SpringerLink