Microwave Performance of AlGaN/GaN High-Electron-Mobility Transistors on Si/SiO2/Poly-SiC Substrates
| Autor: | J. Thuret, Hacene Lahreche, Timothy J. Anderson, Jenshan Lin, Philippe Bove, J. Kim, Stephen J. Pearton, Brent P. Gila, M. Hlad, Lars F. Voss, Fan Ren |
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| Rok vydání: | 2007 |
| Předmět: |
Materials science
business.industry Aluminium nitride Wide-bandgap semiconductor Gallium nitride High-electron-mobility transistor Substrate (electronics) Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Materials Chemistry Silicon carbide Sapphire Optoelectronics Electrical and Electronic Engineering business Molecular beam epitaxy |
| Zdroj: | Journal of Electronic Materials. 37:384-387 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-007-0326-y |
| Popis: | The radiofrequency (RF) performance of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown by molecular beam epitaxy (MBE) on Si-on-poly-SiC (SopSiC) substrates formed by the Smart-CutTM process is reported. This provides a low-cost, high-thermal-conductivity substrate for power applications. HEMTs with a 0.5 μm gate length show cutoff frequencies (f T) of 18 to 27 GHz for gate-to-drain distances of 3 to 32 μm and a maximum frequency of oscillation (f max) of 43 to 47 GHz. The f max values are slightly lower than comparable devices on sapphire, SiC or Si alone. This approach looks promising for applications requiring cheap large-area substrates and better thermal management than provided by pure Si substrates alone. |
| Databáze: | OpenAIRE |
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