Effects of Molecular-Weight Distributions of Resist Polymers and Process Control on Lithography for 0.1.MU.m and Below

Autor:	Shinji Okazaki, Hiroshi Shiraishi, Jiro Yamamoto, Fumio Mural, Shou-ichi Uchino, Tsuneo Terasawa, Toshiyuki Yoshimura
Rok vydání:	1997
Předmět:	chemistry.chemical_classification Materials science Polymers and Plastics Organic Chemistry Nanotechnology Surface finish Polymer chemistry Resist Nano Materials Chemistry Dry etching Composite material Lithography Critical dimension Electron-beam lithography
Zdroj:	Journal of Photopolymer Science and Technology. 10:629-634
ISSN:	1349-6336 0914-9244
DOI:	10.2494/photopolymer.10.629
Popis:	We describe how molecular-weight distributions of resist polymers and process control affect lithography for 0.1μm and below, especially for negative-type resists. There are two main issues for precise critical dimension (CD) control and high resolution in the region: microscopic pattern fluctuation caused by ultrasmall edge roughness in fabricated resist patterns (nano edge roughness); and pattern-size change due to acid diffusion in chemical amplification resists. We have found that nano edge roughness and acid diffusion can be suppressed by controlling the molecular-weight distributions of the base matrix polymers. It is also quite important to control process conditions to achieve high pattern fidelity with molecular-controlled resist materials. Multi-step post baking was applied to minimize the resist pattern deformation before dry etching. We have found that this process can suppress pattern size variations to within 10nm.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::bb954e24641eaa2b75fdb5e7079ca977 https://doi.org/10.2494/photopolymer.10.629 Zobrazit plný text záznamu