| Popis: |
Publisher Summary This chapter describes deep level defects in epitaxial III/V materials. Epitaxial III/V materials play an increasingly important role in a variety of electronic, optoelectronic, and optical applications. The development of new epitaxial growth processes and improvements to already existing techniques have enabled the growth of layers of a quality (expressed by the quantity of structural and electronic defects) previously unobtainable for bulk III/V crystals. Therefore, the III/V material-based devices are now frequently fabricated using homoepitaxial layers grown on the corresponding bulk substrates. But the even greater importance of III/V epitaxial processes stems from the fact that they facilitate the growth of heteroepitaxial structures with properties unavailable for devices fabricated using bulk crystal materials. The electronic properties of the III/V epilayers are in many instances, as in the case of bulk crystals, modified by the deep states present in their band gaps. Some of them are beneficial and have been successfully employed either to improve existing devices or to obtain structures with new characteristics. |
