QUASI-STATIC C-V MEASUREMENTS ON RF MEMS TEST STRUCTURES

Autor: Benno Margesin, Cristian Collini, L. Lorenzelli, Kamal J. Rangra
Rok vydání: 2004
Předmět:
Zdroj: Sensors and Microsystems.
DOI: 10.1142/9789812702944_0070
Popis: The feasibility of integrating the RF MEMS switches in space and wireless communication systems has generated tremendous interest in related fabrication, design and characterization methodologies [ 11. The applications make long term reliability of the devices a very pertinent issue, that involves both process and device characterization. The experimental methods to realize lifetime measurements and mechanical characterization of silicon MEMS switches are important tools to test the performance and reliability of the adopted microfabrication technology [2]. Both MEMS switches and dedicated test structures consisting of a series of suspended bridges have been designed to study the switch properties such as mechanical behavior and dependence of the actuation voltage on the bridge geometry. The composite bridge test structures have five suspended beams of different lengths with individually addressable actuation pads. A PC based experimental setup suitable for on-wafer long term electromechanical studies is developed around a manual probe station [3]-[4]. Our goal is to study the physical mechanisms related to the changes in device capacitance and actuation voltage due to dielectric charging and residual stress changes, as a function of the bias amplitude, polarity and pulse period.
Databáze: OpenAIRE