Distribution of trap energy level in AlGaN/GaN high-electron-mobility transistors on Si under ON-state stress

Autor:	Geok Ing Ng, Xing Zhou, Binit Syamal, Subramaniam Arulkumaran, M. J. Anand
Rok vydání:	2015
Předmět:	Materials science Band gap Transistor General Engineering Time constant Analytical chemistry General Physics and Astronomy Activation energy Molecular physics law.invention Stress (mechanics) Trap (computing) law Transient (oscillation) Energy (signal processing)
Zdroj:	Applied Physics Express. 8:104101
ISSN:	1882-0786 1882-0778
DOI:	10.7567/apex.8.104101
Popis:	The distribution of trap energy (DTE) levels was observed in the energy band gap of buffer GaN by temperature-dependent current transient measurements on AlGaN/GaN HEMTs under fully ON drain-stress (VD[ON]_Stress) conditions. The activation energies (Ea's) obtained from current transients increase with increasing VD[ON]_Stress. Using a multitrap energy (MTE) model, the applied-VD[ON]_Stress-dependent Ea is attributed to DTE levels in the GaN energy band gap, rather than to discrete single trap energy levels. An effective activation energy (Ea_eff) corresponding to trap energy levels activated by the applied VD[ON]_Stress is thus obtained. This observation is validated with two-dimensional numerical simulations. This study will help device designers develop a "DTE-dependent" emission time constant model that is readily applicable for the reliability modelling of future GaN-based circuits.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::bb8c72b37829e615dbde464b7bcbf91e https://doi.org/10.7567/apex.8.104101 Zobrazit plný text záznamu