| Autor: |
Kaidong Xu, Xinying Shi, Jie Yuan, Ding Guanghui, Hushan Cui, Jiale Tang, Lulu Guan, Yudong Zhang, Shiwei Zhuang, Xingyu Li, Yongjie Hu |
| Rok vydání: |
2021 |
| Předmět: |
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| Zdroj: |
2021 China Semiconductor Technology International Conference (CSTIC). |
| DOI: |
10.1109/cstic52283.2021.9461495 |
| Popis: |
In order to study the optical properties of hydrogenated amorphous silicon (a-Si:H) films prepared by plasma-enhanced chemical vapor deposition (PECVD), the influence of process parameters on the extinction coefficient (EC) and the refractive index(n) of a-Si:H films is investigated in the spectrum from 400 to 900 cm−1. The results show that the enhanced HF power and substrate temperature are the most important parameters for increasing the EC and n of the film. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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